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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Low Breakdown Voltage Silicon Avalanche Photodetector Implemented by Interdigitated p-i-n Junctions


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83972


    Title: Low Breakdown Voltage Silicon Avalanche Photodetector Implemented by Interdigitated p-i-n Junctions
    Authors: C.-K. Tseng;W.-C. Hung;J.-D. Tian;K.-N. Ku;N. Na;Y.-S. Liu;M.-C. M. Lee
    教師: 那允中
    Date: 2012
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: CLEO/QELS 2012, San Jose, CA, USA, May 6-11, 2012
    Keywords: Silicon
    Photodetector
    p-i-n
    Abstract: We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.
    Relation Link: http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6325595&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6325595
    http://www.ieee.org/index.html
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83972
    Appears in Collections:[電機工程學系] 會議論文
    [光電工程研究所] 會議論文

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