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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  A 0.5V 4Mb Logic-Process Compatible Embedded Resistive RAM (ReRAM) in 65nm CMOS Using Low Voltage Current-Mode Sensing Scheme with 45ns Random Read Time

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83995

    Title: A 0.5V 4Mb Logic-Process Compatible Embedded Resistive RAM (ReRAM) in 65nm CMOS Using Low Voltage Current-Mode Sensing Scheme with 45ns Random Read Time
    Authors: Meng-Fan Chang;Che-Wei Wu;Chia-Cheng Kuo;Shin-Jang Shen;Ku-Feng Lin;Shu-Meng Yang;Ya-Chin King;Chorng-Jung Lin;Yu-Der Chih
    教師: 林崇榮
    Date: 2012
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, San Francisco, CA, 19-23 Feb. 2012, Pages 434 - 436
    Keywords: Resistive RAM
    Abstract: Numerous low-supply-voltage (VDD) mobile chips, such as energy-harvesting-powered devices and biomedical applications, require low-VDD on-chip nonvolatile memory (NVM) for low-power active-mode access and power-off data storage. However, conventional NVMs cannot achieve low-VDD operation due to insufficient write voltage generated by charge-pumped (CP) circuits at a low VDD, and a lack of low-VDD current-mode sense amplifiers (CSA) [1-4] to overcome read issues in reduced sensing margins, degraded speeds, and insufficient voltage headroom (VHR). Resistive RAM (ReRAM) [4-6] is a promising memory with the advantages of short write time, low write-voltage, and reduced write power compared to Flash and other NVMs. Using a low-VDD CP with relaxed output voltage/current requirements for write operations, ReRAM is a good candidate for on-chip low-VDD NVM if a low-VDD CSA is provided, particularly for frequent-read-seldom-write applications. We develop a body-drain-driven CSA (BDD-CSA) with dynamic BL bias voltage (VBL) and small VHR for larger sensing margins to achieve a lower VDDmin, faster read speed, and better tolerance of read cell current (ICELL) and BL leakage current (IBL-LEAK) variations compared to conventional CSAs. A fabricated 65nm 4Mb ReRAM macro using the BDD-CSA and our CMOS-logic-compatible ReRAM cell [7] achieves 0.5V VDDmin. The BDD-CSA achieves 0.32V VDDmin.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/83995
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文

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