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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84023


    Title: Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability
    Authors: Chang-Hong Shen;Jia-Min Shieh;Jung Y. Huang;Hao-Chung Kuo;Chih-Wei Hsu;Bau-Tong Dai;Ching-Ting Lee;Ci-Ling Pan;Fu-Liang Yang
    教師: 潘犀靈
    Date: 2011
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Vol. 99, No. 3, July 18, 2011, art. 033510
    Abstract: We investigate the performance of a single-junction amorphous Si (a-Si)solar cell fabricated with inductively coupled plasma(ICP)deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015 cm−3). We demonstrate single-junction a-Sisolar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin filmsolar cells on flexible substrates.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84023
    Appears in Collections:[物理系] 期刊論文

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