Applied Physics Letters, American Institute of Physics, Vol. 99, No. 3, July 18, 2011, art. 033510
We investigate the performance of a single-junction amorphous Si (a-Si)solar cell fabricated with inductively coupled plasma(ICP)deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (∼3 × 1015 cm−3). We demonstrate single-junction a-Sisolar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin filmsolar cells on flexible substrates.