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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  GaAs/In0.5Ga0.5P Laser Power Converter with Undercut Mesa for Simultaneous High-Speed Data Detection and dc Electrical Power Generation


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84034


    Title: GaAs/In0.5Ga0.5P Laser Power Converter with Undercut Mesa for Simultaneous High-Speed Data Detection and dc Electrical Power Generation
    Authors: Jin-Wei Shi;Cheng-Yo Tsai;Chan-Shan Yang;Feng-Ming Kuo;Yue-Ming Hsin;J. E. Bowers;Ci-Ling Pan
    教師: 潘犀靈
    Date: 2012
    Publisher: IEEE
    Relation: IEEE Electron Device Letters, IEEE, Vol. 33, No. 4, April 2012, pp. 561-563
    Keywords: Photodiodes (PDs)
    photovoltaic
    Abstract: We demonstrate novel GaAs/In0.5Ga0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In0.5Ga0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In0.5Ga0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (~9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (~15%).
    URI: http://www.ieee.org/index.html
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84034
    Appears in Collections:[物理系] 期刊論文

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