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    National Tsing Hua University Institutional Repository > 理學院 > 物理系 > 期刊論文 >  Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84035


    Title: Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing
    Authors: Yu-Chung Lien;Jia-Min Shieh;Wen-Hsien Huang;Cheng-Hui Tu;Chieh Wang;Chang-Hong Shen;Bau-Tong Dai;Ci-Ling Pan;Chenming Hu;Fu-Liang Yang
    教師: 潘犀靈
    Date: 2012
    Publisher: American Institute of Physics
    Relation: Applied Physics Letters, American Institute of Physics, Vol. 100, No. 14, 2 April 2012, art. 143501
    Keywords: Tunneling
    Dielectrics
    Annealing
    Dielectric thin films
    Electrons
    Abstract: The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/84035
    Appears in Collections:[物理系] 期刊論文

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