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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 博碩士論文  >  銀奈米線的電遷移以及氧化鋅奈米線的完全置換現象之研究

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/86202

    Title: 銀奈米線的電遷移以及氧化鋅奈米線的完全置換現象之研究
    Authors: 王少傑
    Wang, Shau-Chieh
    Description: GH029731810
    Date: 2014
    Keywords: 氧化鋅;;電遷移;奈米線;擴散;完全置換
    Abstract: 原子擴散是一個基本的現象並廣泛的應用在材料科學以及工程上。在臨場觀察超高真空穿透式電子顯微鏡上直接觀察原子擴散,能夠幫助了解各種基本的異質介面變化、相變化,以及各種不同的奈米結構的成長或遷移的現象。本論文主要以臨場觀察電子顯微鏡技術觀察有奈米微結構的銀奈米線之電遷移現及其電性量測,氧化銦中空奈米顆粒與氧化鋅異質結構的生成,以及氧化鋅奈米線被金屬銦完全取代置換的現象。
    Atomic diffusion is a fundamental process that dictates material science and engineering. Direct visualization of atomic diffusion process in in situ ultrahigh vacuum TEM could comprehend the fundamental information about interface dynamics, phase transitions, and different nanostructure growth/migration phenomenon. This thesis is comprised of the in situ TEM observations of the electronmigration and electrical properties of nanocrystal-modified Ag NWs, the formation of In2O3 hollow nanoparticles/ZnO heterostructure, and the complete replacement of ZnO nanowires by indium.
    In situ TEM analyses reveal that electromigration in the twinned Ag NW could be inhibited at the boundaries of twin and stacking fault in the first study. The rate and activation energy of indium atoms diffusing into ZnO nanowires are measured in the second study. The third study demonstrates the replacement processes strongly depend and dominated by the interface dynamics between indium and ZnO. The processes are explained based on thermodynamic evaluation and growth kinetics.
    These results present the potential possibilities to increase the lifetime of nanodevices by the nanocrystal-modified Ag NWs, and to completely replace metal-oxide semiconductor with metal nanowire without oxidation and form crystalline metal nanowire with precise epitaxial metal-semiconductor atomic interface. Formation of such single crystalline metal nanowire without oxidation by diffusion to the metal oxide is unique and it is crucial in nanodevice performances, rather challenging in manufacturing perspective in 1D nanodevices.
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/86202
    Source: http://thesis.nthu.edu.tw/cgi-bin/gs/hugsweb.cgi?o=dnthucdr&i=sGH029731810.id
    Appears in Collections:[材料科學工程學系] 博碩士論文

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